Smart card capable of sensing light

ABSTRACT

A smart card is formed of a memory having light-sensing cells to sense externally supplied light and generate a detection signal in response to the externally supplied light being sensed by the light-sensing cells, and a reset control circuit generating a reset signal in response to the detection signal, the reset signal operating to reset the smart card.

CROSS-REFERENCE TO RELATED APPLICATION

This U.S. non-provisional patent application claims priority under 35U.S.C. § 119 of Korean Patent Application No. 2006-123219 filed on Dec.6, 2006, the entire contents of which are incorporated herein byreference.

BACKGROUND

The present disclosure relates to smart cards and, more particularly, tosmart cards sensing attacks thereto from light sources.

Smart cards have integrated circuit (IC) chips for processing specificoperations by embedding microprocessors, card operating systems,security modules, and memories therein. Smart cards are equipped toperform various functions such as arithmetic operations, encryption, andbilateral communication, and offer high security and portability forusers.

Smart cards are able to store and process information, unlike otherkinds of memory cards that simply contain memory devices. Operations forreading, writing, and erasing data and programs stored in a smart card,and communicating data between the smart card and an external system,are strictly controlled and protected from external attacks by built-inphysical security functions and an elaborate encryption system. Owing tothose practical merits, smart cards are widely used in variouscommercial applications, such as, payment for a fee of a mobile phone,personal identification for internet access, payment for a parking fare,payment for subway, train, bus, highway tolls, direct provision ofpersonal records to hospitals or doctors without additional forms,purchase from internet markets, gasoline and oil supply at gas stations,and so on.

For those functions, smart cards are generally required to have theirinternal integrated circuit (IC) chips charged with cash or storenumbers or information of credit cards, or personal specifications.Therefore, it is essential for the internal information of smart cardsto be secure in order to safely use them.

With a recent increase in the use of smart cards, as more and moresecurity techniques are provided for the IC chips thereof, there arevarious attacking techniques to break their protection systems forpecuniary profits.

Unauthorized access to the smart card in general is called ‘tampering’.Techniques of tampering may be divided into microprobing, softwareattacks, eavesdropping, and fault generation.

A microprobing technique may be used for directly accessing the surfaceof an IC chip. A software attack is operable with a generalcommunication interface, utilizing security vulnerability arising fromprotocols, an encryption algorithm, or execution of an algorithm. Aneavesdropping technique is carried out by evaluating analogcharacteristics of all supplies and interface couplings and measuringelectromagnetic radiation generated from a processor during a normaloperation. A fault generation technique operates to create a malfunctionof a processor to provide an additional access by means of abnormalenvironment conditions. The microprobing technique is a kind of invasiveattack, requiring a lot of time. The other techniques are kinds ofnon-invasive attacks.

As one kind of non-invasive attack, a glitch attacking technique is ableto freely hack a smart card by applying an external signal thereto tomake it operate irregularly or applying an abnormal signal to its power.

In recent years, there is an attacking technique intending to changedata of a memory in a smart card by means of a laser that can be emittedlocally, which makes it difficult to clearly protect smart cards thatuse conventional optical sensors.

SUMMARY OF THE INVENTION

Exemplary embodiments of the present invention are directed to solvingthe aforementioned shortcomings, and providing a smart card capable ofsensing an attempt for changing data by locally irradiating lightthereto.

An exemplary embodiment of the present invention provides a smart cardcomprised of: a memory having light-sensing cells to sense externallight and generating a detection signal in response to the externallight sensed by the light-sensing cell; and a reset control circuitgenerating a reset signal in response to the detection signal, the resetsignal operating to reset the smart card.

In an exemplary embodiment, the light-sensing cell includes a junctionfrom which a leakage current is generated.

In an exemplary embodiment, the light-sensing cells are arranged in aplurality of light-sensing arrays arranged between a plurality of memorycell arrays.

In an exemplary embodiment, the light-sensing cells are normallyconditioned to be off-cells.

According to an exemplary embodiment, the smart-card memory is comprisedof: a plurality of memory cell an arrays including normal cells each ofwhich has a drain connected to a bit line, a source connected to acommon source line, and a gate coupled to a word line; a plurality oflight-sensing cell arrays including normal cells each of which has adrain connected to a sensing bit line, a gate coupled to the word line,and a source that is floated; and a sensing amplifier connected to thesensing bit line, generating the detection signal by sensing a leakagesignal that flows through the sensing bit line from the light-sensingcell if external light is irradiated on the light-sensing cell.

In an exemplary embodiment, the normal cell is a NOR-type cell.

In an exemplary embodiment, the normal cell is one of a stacked-gatecell, a split-gate cell, and a source-side injection cell.

According to an exemplary embodiment, the memory is comprised of: aplurality of memory cell arrays including normal cells each of which hasa drain connected to a bit line, a source connected to a common sourceline, and a gate coupled to a word line; a plurality of light-sensingcell arrays including normal cells each of which has a drain connectedto a sensing bit line, a source connected to the common source line, anda gate that is floated; and a sensing amplifier connected to the sensingbit line, generating a detection signal by sensing a leakage signal thatflows through the sensing bit line from the light-sensing cell ifexternal light is irradiated on the light-sensing cell.

In an exemplary embodiment, the memory is comprised of: a plurality ofmemory cell arrays including normal cells each of which has a drainconnected to a bit line, a source connected to a common source line, anda gate coupled to a word line; a plurality of light-sensing cell arraysincluding normal cells each of which has a drain connected to a sensingbit line, a source connected to the common source line, and a gate thatis grounded; and a sensing amplifier connected to the sensing bit line,generating a detection signal by sensing a leakage signal that flowsthrough the sensing bit line from the light-sensing cell if externallight is irradiated on the light-sensing cell.

According to an exemplary embodiment, the memory is comprised of: aplurality of memory cell arrays including normal cells each of which hasa drain connected to a bit line, a source connected to a common sourceline, and a gate coupled to a word line; a plurality of light-sensingcell arrays including normal cells each of which has a drain connectedto a sensing bit line, a gate coupled to the word line, and a sourcethat is floated; a multiplexer selectively activating the plurality ofsensing bit lines in response to a selection signal; and a sensingamplifier generating a detection signal by sensing a leakage signal thatflows through the sensing bit line from the light-sensing cell ifexternal light is irradiated on the light-sensing cell. The multiplexerhas a plurality of NMOS transistors, in which each NMOS transistorincludes a drain connected to the sensing bit line, a source connectedto the sensing amplifier, and a gate coupled to the selection signal.

In an exemplary embodiment, the memory is comprised of: a plurality ofmemory cell arrays including normal cells each of which has a drainconnected to a bit line, a source connected to a common source line, anda gate coupled to a word line; a plurality of light-sensing cell arraysincluding normal cells each of which has a drain connected to a sensingbit line, a source connected to the common source line, and a gate thatis floated; a multiplexer selectively activating the plurality ofsensing bit lines in response to a selection signal; and a sensingamplifier connected to the sensing bit line, generating a detectionsignal by sensing a leakage signal that flows through the sensing bitline from the light-sensing cell if external light is irradiated on thelight-sensing cell. The multiplexer has a plurality of NMOS transistors,in which each NMOS transistor includes a drain connected to the sensingbit line, a source connected to the sensing amplifier, and a gatecoupled to the selection signal.

In an exemplary embodiment, the memory is a nonvolatile memory.

A further understanding of the nature and advantages of exemplaryembodiments of the present invention may be realized by reference to theremaining portions of the specification and the attached drawings.

BRIEF DESCRIPTION OF THE FIGURES

Exemplary embodiments of the present invention will be understood inmore detail from the following descriptions taken in conjunction withthe attached figures, wherein like reference numerals refer to likeparts throughout the various figures unless otherwise specified. In thefigures:

FIG. 1 is a block diagram of a smart card according to an exemplaryembodiment of the present invention;

FIG. 2 is a core circuit diagram of a memory in accordance with anexemplary embodiment of the present invention;

FIGS. 3 (a) and (b) illustrate types of memory cells used as storagecells in the memory shown in FIG. 2;

FIGS. 4 (a) and (b) illustrate types of memory cells used aslight-sensing cells in the memory shown in FIG. 2;

FIG. 5 is a core circuit diagram of a memory in accordance with anexemplary embodiment of the present invention;

FIGS. 6 (a), (b), and (c) illustrate types of memory cells used aslight-sensing cells in the memory shown in FIG. 5; and

FIG. 7 illustrates an exemplary embodiment of a memory able to controlsensing bit lines therein.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

Exemplary embodiments of the present invention will be described belowin more detail with reference to the accompanying drawings. The presentinvention may, however, be embodied in different forms and should not beconstructed as limited to the exemplary embodiments set forth herein.Rather, these exemplary embodiments are provided so that this disclosurewill be thorough and complete, and will fully convey the scope of thepresent invention to those of ordinary skill in the art. Like referencenumerals refer to like elements throughout the accompanying figures.

Hereinafter, will be described exemplary embodiments of the presentinvention in conjunction with the accompanying drawings.

FIG. 1 is a block diagram of a smart card 100 according to an exemplaryembodiment of the present invention. Referring to FIG. 1, the smart card100 is comprised of a central processing unit (CPU) 110, a read-onlymemory (ROM) 120, a random access memory (RAM) 130, a serialinput/output (SIO) interface 140, a memory 150, and a reset controlcircuit 160.

The CPU 110 controls an overall operation of the smart card 100. The ROM120 is programmed with basic commands and a card operating system (COS)for managing the IC chip (not shown) of the smart card 100. The RAM 130is used for managing temporary data and storing intermediate results ofcalculations made by the CPU 110. The SIO interface 140 is provided totransceive data between the smart card 100 and an external terminal (notshown).

The memory 150 stores user information protected from an external attackby the COS, for example, a data set including card issuer data and userdata, and functions applicable in various applications. The memory 150includes normal memory cells (not shown) and a light-sensing cell 152.The light-sensing cell 152 generates a detection signal DE by sensinglight irradiated thereto. The light-sensing cell 152 includes a junctioncapable of generating a leakage current in response to light irradiatedthereon.

The reset control circuit 160 generates a reset signal RST for resettingthe CPU 110 in accordance with a detection result of an operatingcondition of the smart card 100. The reset signal RST of the resetcontrol circuit 160 is provided to prevent damage when detecting anabnormal state of the smart card 100.

The reset control circuit 160 is configured by including various kindsof detectors for sensing abnormal states of the smart card 100 andexternal attacks of unauthorized users. Although not shown, suchdetectors include an exposure detector, a passivation removal detector,a frequency detector, a voltage detector, and a temperature detector.The exposure detector (not shown) generates the reset signal RST whenthe chip surface is exposed to light in an effort to remove a siliconoxide film that is used as a protection layer of the smart card. Thefrequency detector (not shown) operates to detect a frequency of a mainclock signal, and generates the reset signal RST when a detectedfrequency is out of a predetermined range. The voltage detector (notshown) operates to detect a voltage level supplied externally, from acard reader, and generates the reset signal RST when a detected voltageis out of a regular range. The temperature detector (not shown) operatesto detect the temperature around the smart card, and generates the resetsignal RST when the detected temperature is higher or lower than apredetermined range. On the other hand, the reset control circuit 160generates the reset signal RST in response to the detection signal DEupon sensing light, which is irradiated thereto, by the memory 150.

The memory 150 of the smart card 100 according to an exemplaryembodiment of the present invention may be comprised of a plurality oflight-sensing cell arrays, although only the light sensing cell 152 isshown in FIG. 1. The light-sensing cell 152 of the memory 150 generatesthe detection signal DE from light irradiated thereto. The detectionsignal DE is transferred to the reset control circuit 160. The resetcontrol circuit 160 generates the reset signal RST in response to thedetection signal DE, thereby resetting the smart card 100.

FIG. 2 is a core circuit diagram of the memory 150 in accordance with anexemplary embodiment of the present invention. Referring to FIG. 2, thememory 150 includes a plurality of light-sensing cell arrays 152 a and152 b. For convenience of description, FIG. 2 representatively shows thetwo light-sensing cell arrays 152 a and 152 b. An interval between thelight-sensing cell arrays 152 a and 152 b is preferred to be identicalto or smaller than a spot size of a laser irradiated thereto.

The light-sensing cell arrays 152 a and 152 b of the memory 150 sensethe locally irradiated light. When a hacker irradiates light on thelight-sensing arrays 152 a and 152 b of the memory 150, a leakagecurrent is generated through the light-sensing arrays 152 a and 152 b bythe irradiated light. The leakage current is transferred to a sensingamplifier 154 by way of a sensing bit lines SBL0 and SBLj. The sensingamplifier 154 generates the detection signal DE by sensing andamplifying the leakage current. The detection signal DE is output to thereset control circuit 160 as shown in FIG. 1.

In the memory 150, normal memory cells labeled generally as Cell arecoupled to word lines WLn, bit lines BLi, and a common source line CStypically connected to ground. Unlike the memory cells, however, thelight-sensing cells of the arrays 152 a and 152 b are not connected tothe common source line CS. The light-sensing cells of the arrays 152 aand 152 b correspond to off-states of the normal memory cells Cell.

The light-sensing cells shown in FIG. 2 just relate to an exemplaryembodiment according to the present invention. The light-sensing cellsmay be configured in various structures including a junction forgenerating a leakage current by sensing light. If the memory 150 is akind of flash memory, the light-sensing cells may be configured invarious structures, for example, a general NOR cell, a stacked-gatecell, a split-gate cell, or a source-side injection cell.

A stacked-gate cell (not shown) is formed with floating and controlgates stacked in sequence. On the other hand, the stacked-gate cellusually has the problem of over-erasure. The over-erasure arises from anexcessive discharge of the floating gate in an erasing operation. Athreshold voltage of an over-erased cell is conditioned in a negativevalue, causing inadvertent current flow therethrough even though thecell is deselected. The structure of a split-gate cell has been proposedwith the purpose of overcoming such an over-erasure trouble.

A split-gate cell (not shown) is helpful in overcoming the problem ofover-erasure by means of a selection gate portion that is placed under acontrol gate thereof. In other words, the selection gate portionfunctions to interrupt a leakage current from a floating gate channelthat is placed under a floating gate that is excessively discharged.During this time, the control gate is turned off. Such a split-gatecell, however, is disadvantageous in programming efficiency. In otherwords, the split-gate cell may dissipate power needlessly and beprogrammed in a slow speed. The structure of a source-side injectioncell is proposed to improve the programming efficiency.

A source-side injection cell (not shown) is fabricated in a substratehaving a source and drain. In the source-side injection cell, aselection gate, which is also called a side-wall gate, is formed on asidewall of the source. With this structure, if a high voltage isapplied to a control gate, hot electron injection is induced toward afloating gate from the source. Such a source-side injection cell isuseful to improving the programming efficiency up to 1000˜10000 timesmore than a conventional one.

FIGS. 3, (a) and (b) illustrate types of memory cells 151 used asstorage cells Cell in the memory shown in FIG. 2, and (a) shows astructure of a general NOR cell, that is, a NOR-type flash memory cell.The NOR cell is composed of a drain connected to a bit line BLi, asource connected to a common source line CS, and a gate coupled to aword line WLn. The NOR cell is programmed or erased with data inresponse to a voltage of the word line WLn. In FIG. 3, (b) shows astructure of an electrically erasable and programmable read-only memory(EEPROM) cell. The EEPROM cell is constructed to include a control gatecell that responds to a control signal CGn.

In FIG. 4, (a) and (b) illustrate types of memory cells used as thelight-sensing cells 152 a and 152 b in the memory 150 shown in FIGS. 2and (a) is a NOR cell type while (b) is an EEPROM cell type. Thelight-sensing cell shown in (b) includes a control gate cell whosecontrol gate is coupled to a control signal CGn. The light-sensing cellof the EEPROM cell is organized including a drain connected a sensingbit line SBLj, a gate coupled to a word line WLn, and a source that isfloated. The light-sensing cell 152 shown in (a) or (b) of FIG. 4 isnormally conditioned in an off-state wherein it is disconnected from thecommon source line CS. Thus, there is no current flowing through thelight-sensing cell in a normal condition. On the other hand, if light isirradiated on the light-sensing cell 152 due to an external attack by anunauthorized user, the light-sensing cell 152 generates a leakagecurrent from its junction. This leakage current flows out to the sensingamplifier 154 by way of the sensing bit line SBLj.

The light-sensing cell 152 according to exemplary embodiments of thepresent invention is similar to a normal memory cell in itsmanufacturing process. The light-sensing cell 152 is structured similarto an adjacent normal cell, but is disconnected from the common sourceline.

The light-sensing cell 152 of exemplary embodiments of the presentinvention may not be configured to have a structure for disconnectionfrom the common source line CS. Rather, the light-sensing cell 152 isonly required to have at least a junction for generating a leakagecurrent in response to light irradiated thereto, thereby maintaining anoff-cell state in a normal condition.

FIG. 5 shows an exemplary embodiment of the memory 150′ in accordancewith an exemplary embodiment of the present invention. Referring to FIG.5, the memory 150′ includes light-sensing cell arrays 152 c and 152 dwhose gates are disconnected from a word line WLn. In the memory 150′shown in FIG. 5, if a normal memory cell Cell makes use of a general NORcell, the light-sensing cell array 152 c or 152 d is formed those cellsas shown in FIG. 6 (a), (b), or (c). Referring to FIGS. 6 (a), (b), and(c), the light-sensing cell 152′ is configured including a drainconnected to the sensing bit line SBLj and a source connected to thecommon source line CS. The light-sensing cell shown in (a) is structuredsuch that its gate is floated, while gates of the light-sensing cells152′ shown in (b) and (c) are grounded. In this exemplary embodiment,the light-sensing cell of (b) is a NOR cell type, and the light-sensingcell of (c) is an EEPROM cell type. Therefore, the light-sensing cell152′ shown in (a), (b), or (c) is conditioned to be an off-cell in anormal condition. With this structure, if light is irradiated on thelight-sensing cell 152′, the light-sensing cell 152′ generates a leakagecurrent. The leakage current flows into the sensing amplifier 154 shownin FIG. 5 by way of the sensing bit line SBLj. The sensing amplifier 154generates the detection signal DE by sensing the leakage current flowingthrough the sensing bit line SBLj. The detection signal DE is applied tothe reset control circuit 160.

The smart card 100 according to exemplary embodiments of the presentinvention includes the sensing bit lines SBL0˜SBLm connected to thelight-sensing arrays. The sensing bit lines SBL0 SBLm are automaticallyactivated when operating the normal memory cell array. On the otherhand, it is not always required that the sensing bit lines be activatedautomatically. The memory, 150′ is able to control activation of thesensing bit lines SBL0 SBLm as needed.

FIG. 7 illustrates an exemplary embodiment of a memory 150″ that is ableto control the sensing bit lines SBL0˜SBLm therein. Referring to FIG. 7,the memory 150″ according to an exemplary embodiment of the presentinvention is comprised of a memory cell array including light-sensingcell arrays 152 e and 152 f, a multiplexer (MUX) 156 for selecting thelight-sensing cell arrays 152 e and 152 f, and a sensing amplifier 158.The memory 150″ operates to select the light-sensing cell array to senselight in response to a control signal CSBL. In other words, the sensingbit lines SBL0˜SBLm connected to the light-sensing cell array arepartially selected for sensing light.

The multiplexer 156 may be simply formed of switching transistors (notshown) each connected to the sensing bit lines SBL0 SBLm. Each switchingtransistor may be formed of an NMOS transistor. The control signal CSBLcontrols the switching transistors to select between the sensing bitlines SBL0 and SBLj.

Referring to FIG. 7, the procedure of sensing light by the memory 150″is as follows. The memory 150″ selects the sensing bit line, forexample, SBLj, which would be attacked by a hacker, in response to thecontrol signal CSBL. The light-sensing cell array 152 f connected to theselected sensing bit lines SBLj generates a leakage current in responseto light irradiation thereon. The leakage current flows into the sensingamplifier 158 by way of the selected sensing bit line SBLj. The sensingamplifier 158 generates and applies the detection signal DE inaccordance with the leakage current.

Referring to FIGS. 2, 5, and 7, the memories 150, 150′, and 150′ of thesmart card 100 according to exemplary embodiments of the presentinvention are structured in the light-sensing array, but are notrestrictive hereto. The smart card 100 of exemplary embodiments of thepresent invention may be also configured with a memory cell arrayincluding another proper modification of light-sensing cell.

The light-sensing cell according to exemplary embodiments of the presentinvention is easily fabricated by the process similar to that of formingthe normal memory cell of the memory cell array.

Further, it is able to sense a local light irradiation by arranging thelight-sensing cells, which are smaller than laser spots, in the memorycell array. Thereby, the smart card 100 according to exemplaryembodiments of the present invention is improved in security level.

As described above, a memory having light-sensing cells for sensinglocally irradiated light is helpful in enhancing the security level ofthe smart card.

The above-disclosed subject matter is to be considered illustrative, andnot restrictive, and the appended claims are intended to cover all suchmodifications, enhancements, and other exemplary embodiments, which fallwithin the true spirit and scope of the present invention. Thus, to themaximum extent allowed by law, the scope of the present invention is tobe determined by the broadest permissible interpretation of thefollowing claims and their equivalents, and shall not be restricted orlimited by the foregoing detailed description.

1. A smart card comprising: a memory having light-sensing cells to senseexternally supplied light and generating a detection signal in responseto the light sensed by the light-sensing cell; and a reset controlcircuit generating a reset signal in response to the detection signal,the reset signal operating to reset the smart card.
 2. The smart card asset forth in claim 1, wherein each light-sensing cell includes ajunction from which a leakage current is generated.
 3. The smart card asset forth in claim 1, wherein the light-sensing cells are arranged in aplurality of light-sensing arrays between a plurality of memory cellarrays.
 4. The smart card as set forth in claim 3, wherein thelight-sensing cells are normally conditioned to be off-cells.
 5. Thesmart card as set forth in claim 4, wherein the memory comprises: theplurality of memory cell arrays including normal cells each of which hasa drain connected to a bit line, a source connected to a common sourceline, and a gate coupled to a word line; the plurality of light-sensingcell arrays including normal cells each of which has a drain connectedto a sensing bit line, a gate coupled to the word line, and a sourcethat is floated; and a sensing amplifier connected to the sensing bitline, and generating the detection signal by sensing a leakage signalthat flows through the sensing bit line from a light-sensing cell whenthe externally supplied light is irradiated on the light-sensing cell.6. The smart card as set forth in claim 5, wherein the normal cells areNOR-type cells.
 7. The smart card as set forth in claim 6, wherein thenormal cells are one of a stacked-gate cell, a split-gate cell, and asource-side injection cell.
 8. The smart card as set forth in claim 4,wherein the memory comprises: the plurality of memory cell arraysincluding normal cells each of which has a drain connected to a bitline, a source connected to a common source line, and a gate coupled toa word line; the plurality of light-sensing cell arrays including normalcells each of which has a drain connected to a sensing bit line, asource connected to the common source line, and a gate that is floated;and a sensing amplifier connected to the sensing bit line, andgenerating the detection signal by sensing a leakage signal that flowsthrough the sensing bit line from a light-sensing cell when theexternally supplied light is irradiated on the light-sensing cell. 9.The smart card as set forth in claim 4, wherein the memory comprises:the plurality of memory cell arrays including normal cells each of whichhas a drain connected to a bit line, a source connected to a commonsource line, and a gate coupled to a word line; the plurality oflight-sensing cell arrays including normal cells each of which has adrain connected to a sensing bit line, a source connected to the commonsource line, and a gate that is grounded; and a sensing amplifierconnected to the sensing bit line, and generating the detection signalby sensing a leakage signal that flows through the sensing bit line froma light-sensing cell when the externally supplied light is irradiated onthe light-sensing cell.
 10. The smart card as set forth in claim 4,wherein the memory comprises: the plurality of memory cell arraysincluding normal cells each of which has a drain connected to a bitline, a source connected to a common source line, and a gate coupled toa word line; the plurality of light-sensing cell arrays including normalcells each of which has a drain connected to a sensing bit line, a gatecoupled to the word line, and a source that is floated; a multiplexerselectively activating the plurality of sensing bit lines in response toa selection signal; and a sensing amplifier generating the detectionsignal by sensing a leakage signal that flows through the sensing bitline from the light-sensing cell when the externally supplied light isirradiated on the light-sensing cell.
 11. The smart card as set forth inclaim 10, wherein the multiplexer comprises a plurality of NMOStransistors, wherein each NMOS transistor includes a drain connected tothe sensing bit line, a source connected to the sensing amplifier, and agate coupled to the selection signal.
 12. The smart card as set forth inclaim 4, wherein the memory comprises: the plurality of memory cellarrays including normal cells each of which has a drain connected to abit line, a source connected to a common source line, and a gate coupledto a word line; the plurality of light-sensing cell arrays includingnormal cells each of which has a drain connected to a sensing bit line,a source connected to the common source line, and a gate that isfloated; a multiplexer selectively activating the plurality of sensingbit lines in response to a selection signal; and a sensing amplifierconnected to the sensing bit line, generating the detection signal bysensing a leakage signal that flows through the sensing bit line from alight-sensing cell when the externally supplied light is irradiated onthe light-sensing cell.
 13. The smart card as set forth in claim 12,wherein the multiplexer comprises a plurality of NMOS transistors,wherein each NMOS transistor includes a drain connected to the sensingbit line, a source connected to the sensing amplifier, and a gatecoupled to the selection signal.
 14. The smart card as set forth inclaim 1, wherein the memory comprises a nonvolatile memory.